The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Aug. 14, 2013
Applicant:
Fujifilm Corporation, Tokyo, JP;
Inventors:
Masahiro Takata, Kanagawa, JP;
Atsushi Tanaka, Kanagawa, JP;
Assignee:
FUJIFILM Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 21/00 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 27/146 (2006.01); G02F 1/1368 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 27/14658 (2013.01); H01L 29/66969 (2013.01); H01L 29/78696 (2013.01); G02F 1/1368 (2013.01); G02F 2001/13685 (2013.01); H01L 27/3262 (2013.01);
Abstract
A field effect transistor including: a gate insulating film; an oxide semiconductor layer that serves as an active layer and whose main structural elements are Sn, Zn and O, or Sn, Ga, Zn and O; and an oxide intermediate layer that is disposed between the gate insulating film and the oxide semiconductor layer, and whose resistivity is higher than that of the oxide semiconductor layer.