The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Aug. 09, 2013
Fujifilm Corporation, Minato-ku, Tokyo, JP;
Masashi Ono, Ashigarakami-gun, JP;
Masahiro Takata, Ashigarakami-gun, JP;
Atsushi Tanaka, Ashigarakami-gun, JP;
Masayuki Suzuki, Ashigarakami-gun, JP;
FUJIFILM Corporation, Tokyo, JP;
Abstract
A method of fabricating a thin-film transistor, the method including: film-forming an active layer, that contains as a main component thereof an oxide semiconductor structured by O and at least two elements among In, Ga and Zn, in a film formation chamber into which at least oxygen is introduced, and b) heat treating the active layer at less than 300° C. in a dry atmosphere, wherein the film-forming a) and the heat treating are carried out such that, given that an oxygen partial pressure with respect to an entire pressure of an atmosphere within the film formation chamber in the film-forming is POdepo (%), and an oxygen partial pressure with respect to an entire pressure of an atmosphere during the heat treating is POanneal (%), the oxygen partial pressure POanneal (%) at the time of the heat treating b) satisfies a relationship: −20/3POdepo+40/3≦POanneal≦−800/43POdepo+5900/43.