The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Sep. 16, 2013
Applicant:
Seoul National University R&db Foundation, Seoul, KR;
Inventors:
Assignee:
Seoul National University R&DB Foundation, Seoul, KR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 21/316 (2006.01); H01L 29/51 (2006.01); H01L 29/47 (2006.01); H01L 29/66 (2006.01); H01L 29/872 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/76 (2006.01); H01L 29/423 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/517 (2013.01); H01L 21/28264 (2013.01); H01L 21/28581 (2013.01); H01L 21/7605 (2013.01); H01L 29/475 (2013.01); H01L 29/66212 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01); H01L 29/872 (2013.01); H01L 29/2003 (2013.01); H01L 29/42356 (2013.01); H01L 29/42376 (2013.01);
Abstract
A method for manufacturing a nitride-based semiconductor device includes: preparing a substrate; forming a buffer layer on the substrate, the buffer layer preventing dislocation with the substrate; forming a spacer on the buffer layer; forming a barrier layer on the spacer, the barrier layer forming a hetero-structure with the spacer; forming a protecting layer on the barrier layer; and forming an HfOlayer the protecting layer through RF sputtering.