The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Dec. 08, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/205 (2006.01); H01L 29/165 (2006.01); H01L 29/73 (2006.01); H01L 29/737 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/205 (2013.01); H01L 29/165 (2013.01); H01L 29/737 (2013.01); H01L 29/7311 (2013.01); H01L 29/7376 (2013.01); H01L 29/7391 (2013.01); H01L 29/7848 (2013.01);
Abstract
Tunneling field effect transistors are provided. The tunneling field effect transistor includes a source region, a drain region, and a channel region disposed between the source region and the drain region. The channel region includes a first region adjacent to the source region and a second region adjacent to the drain region. A first energy band gap of the first region is lower than a second energy band gap of the second region, and the first region has a direct energy band gap.