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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9236435 B1

PDFFull Text
Date of Patent:
Jan. 12, 2016

Filed:

Dec. 08, 2014

Tunneling field effect transistor

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Xin-Gui Zhang, Suwon-si, KR;

Tae-Yong Kwon, Suwon-si, KR;

Sang-Su Kim, Yongin-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:

Muir Patent Law, PLLC

Primary Examiner:

Minh-Loan Tran

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/205 (2006.01); H01L 29/165 (2006.01); H01L 29/73 (2006.01); H01L 29/737 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/205 (2013.01); H01L 29/165 (2013.01); H01L 29/737 (2013.01); H01L 29/7311 (2013.01); H01L 29/7376 (2013.01); H01L 29/7391 (2013.01); H01L 29/7848 (2013.01);
Abstract

Tunneling field effect transistors are provided. The tunneling field effect transistor includes a source region, a drain region, and a channel region disposed between the source region and the drain region. The channel region includes a first region adjacent to the source region and a second region adjacent to the drain region. A first energy band gap of the first region is lower than a second energy band gap of the second region, and the first region has a direct energy band gap.

Find Patent Forward Citations

Zhang, Xin-Gui. (2016). Tunneling field effect transistor (U.S. Patent No. 9236435). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9236435

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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