The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Feb. 21, 2014
Applicant:
Ps4 Luxco S.a.r.l., Luxembourg, LU;
Inventors:
Assignee:
PS4 Luxco S.a.r.l., Luxembourg, LU;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10823 (2013.01); H01L 27/10876 (2013.01); H01L 29/1037 (2013.01); H01L 29/4236 (2013.01); H01L 29/42368 (2013.01); H01L 29/66621 (2013.01); H01L 29/78 (2013.01); H01L 29/7827 (2013.01); H01L 29/0847 (2013.01);
Abstract
A semiconductor device capable of increasing ON current while reducing channel resistance and allowing transistors to operate independently and stably, having a fin formed to protrude from the bottom of a gate electrode trench, a gate insulating film covering the surfaces of the gate electrode trench and the fin, a gate electrode embedded in a lower part of the gate electrode trench and formed to stride over the fin via the gate insulating film, a first impurity diffusion region arranged on a first side face, and a second impurity diffusion region arranged on a second side face.