The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 2016

Filed:

Feb. 18, 2015
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Kentaro Ikeda, Kawasaki, JP;

Hiroshi Mochikawa, Hachioji, JP;

Atsuhiko Kuzumaki, Kodaira, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/60 (2006.01); H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 29/866 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/80 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); H01L 27/0629 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/7786 (2013.01); H01L 29/80 (2013.01); H01L 29/866 (2013.01);
Abstract

A semiconductor device according to the embodiments includes: a first normally-off transistor including a first source terminal, a first drain terminal, and a first gate terminal; a normally-on transistor including a second source terminal connected to the first drain terminal, a second drain terminal, and a second gate terminal connected to the first source terminal; a protection element provided between the first gate terminal and the second drain terminal, and having breakdown voltage lower than breakdown voltage of the normally-on transistor; and a first diode including a first anode connected to the second drain terminal and a first cathode connected to the protection element.


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