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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9236345 B1

PDFFull Text
Date of Patent:
Jan. 12, 2016

Filed:

Mar. 24, 2014

Oxide mediated epitaxial nickel disilicide alloy contact formation

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Emre Alptekin, Wappingers Falls, NY (US);

Nicolas L. Breil, Wappingers Falls, NY (US);

Christian Lavoie, Pleasantville, NY (US);

Ahmet S. Ozcan, Pleasantville, NY (US);

Kathryn T. Schonenberg, Wappingers Falls, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:

Scully, Scott, Murphy & Presser, P.C.

Primary Examiner:

Khaja Ahmad

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 23/532 (2006.01); H01L 27/092 (2006.01); H01L 23/535 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53209 (2013.01); H01L 21/28518 (2013.01); H01L 21/28568 (2013.01); H01L 23/535 (2013.01); H01L 27/092 (2013.01); H01L 29/41766 (2013.01); H01L 29/42364 (2013.01); H01L 29/78 (2013.01);
Abstract

Contact openings are formed into a dielectric material exposing a surface portion of a semiconductor substrate. An interfacial oxide layer is then formed in each contact opening and on an exposed surface portion of the interfacial oxide layer. A NiPt alloy layer is formed within each opening and on the exposed surface portion of each interfacial oxide layer. An anneal is then performed that forms a contact structure of, from bottom to top, a nickel disilicide alloy body having an inverted pyramidal shape, a Pt rich silicide cap region and an oxygen rich region. A metal contact is then formed within each contact opening and atop the oxygen rich region of each contact structure.

Find Patent Forward Citations

Alptekin, Emre. (2016). Oxide mediated epitaxial nickel disilicide alloy contact formation (U.S. Patent No. 9236345). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9236345

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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