The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Mar. 29, 2012
Michael P. Chudzik, Danbury, CT (US);
Naim Moumen, Walden, NY (US);
Vijay Narayanan, New York, NY (US);
Dae-gyu Park, Poughquaq, NY (US);
Vamsi K. Paruchuri, New York, NY (US);
Michael P. Chudzik, Danbury, CT (US);
Naim Moumen, Walden, NY (US);
Vijay Narayanan, New York, NY (US);
Dae-Gyu Park, Poughquaq, NY (US);
Vamsi K. Paruchuri, New York, NY (US);
GlobalFoundries, Inc., Grand Cayman, KY;
Abstract
Methods, IC and related transistors using capping layer with high-k/metal gate stacks are disclosed. In one embodiment, the IC includes a first type transistor having a gate electrode including a first metal, a second metal and a first dielectric layer, the first dielectric layer including oxygen; a second type transistor separated from the first type transistor by an isolation region, the second type transistor having a gate electrode including the second metal having a work function appropriate for the second type transistor and the first dielectric layer; and wherein the gate electrode of the first type transistor includes a rare earth metal between the first metal and the second metal and the gate electrode of the second type transistor includes a second dielectric layer made of an oxide of the rare earth metal.