The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 2016

Filed:

Jan. 08, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Tae Hun Kim, Anyang-si, KR;

Sung Joon Kim, Suwon-si, KR;

Su Yeol Lee, Seongnam-si, KR;

Seung Hwan Lee, Suwon-si, KR;

Tae Sung Jang, Hwaseong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/78 (2006.01); H01L 33/62 (2010.01); H01L 23/00 (2006.01); H01L 33/00 (2010.01); H01L 33/52 (2010.01); H01L 33/60 (2010.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); H01L 24/18 (2013.01); H01L 33/62 (2013.01); H01L 33/52 (2013.01); H01L 33/60 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01);
Abstract

A method of manufacturing a semiconductor light emitting device includes forming a plurality of semiconductor light emitting devices on a substrate, the semiconductor light emitting devices having at least one electrode pad formed on upper surfaces thereof; forming a conductive bump by forming a bump core on the electrode pad of each of the semiconductor light emitting devices and forming a reflective bump layer enclosing the bump core; forming a resin encapsulating part containing a phosphor on the plurality of semiconductor light emitting devices to encompass the conductive bump; polishing the resin encapsulating part to expose the bump core of the conductive bump to an upper surface of the resin encapsulating part; and forming individual semiconductor light emitting devices by cutting the resin encapsulating part between the semiconductor light emitting devices.


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