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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9236303 B1

PDFFull Text
Date of Patent:
Jan. 12, 2016

Filed:

Aug. 14, 2013

Substrate film and method of manufacturing the same

Applicant:

Lg Chem, Ltd., Seoul, KR;

Inventors:

Hyo Sook Joo, Daejeon, KR;

Se-Ra Kim, Daejeon, KR;

Jung Sup Shim, Daejeon, KR;

Suk Ky Chang, Daejeon, KR;

Assignee:

LG Chem, Ltd., Seoul, KR;

Attorney:

Rothwell, Figg, Ernst & Manbeck, P.C.

Primary Examiner:

Brook Kebede

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/78 (2006.01); C08F 8/10 (2006.01); C09J 133/06 (2006.01); C08F 20/18 (2006.01); H01L 21/683 (2006.01); C09J 7/02 (2006.01); B29C 39/00 (2006.01); C08G 18/62 (2006.01); C08G 18/81 (2006.01); C09J 175/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); B29C 39/006 (2013.01); C08F 8/10 (2013.01); C08F 20/18 (2013.01); C08G 18/6229 (2013.01); C08G 18/8116 (2013.01); C09J 7/0267 (2013.01); C09J 133/066 (2013.01); C09J 175/16 (2013.01); H01L 21/6836 (2013.01); C09J 2201/606 (2013.01); C09J 2203/326 (2013.01); C09J 2433/006 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68327 (2013.01); Y10T 428/2809 (2015.01);
Abstract

Provided are a substrate film and a method of manufacturing the substrate film. The substrate film may have excellent thermal resistance and dimensional stability, has excellent stress relaxation to prevent damage of a wafer caused by remaining stress, inhibits damage to or flying-off of the wafer caused by application of a non-uniform pressure during the processing of the wafer, and has excellent cuttability. Accordingly, the substrate film of the present invention can be effectively used as a processing sheet in a process of processing various kinds of wafers including dicing, back-grinding or picking-up.

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