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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9236263 B1

PDFFull Text
Date of Patent:
Jan. 12, 2016

Filed:

Dec. 18, 2012

Method for fabricating semiconductor device including silicon-containing layer and metal-containing layer, and conductive structure of the same

Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Kyong-Bong Rouh, Gyeonggi-do, KR;

Shang-Koon Na, Gyeonggi-do, KR;

Yong-Seok Eun, Gyeonggi-do, KR;

Su-Ho Kim, Gyeonggi-do, KR;

Tae-Han Kim, Gyeonggi-do, KR;

Mi-Ri Lee, Gyeonggi-do, KR;

Assignee:

SK Hynix Inc., Gyeonggi-Do, KR;

Attorney:

IP & T Group LLP

Primary Examiner:

Long K Tran

Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/4763 (2006.01); H01L 21/283 (2006.01); H01L 21/768 (2006.01); H01L 21/3213 (2006.01); H01L 21/28 (2006.01); H01L 29/49 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 21/283 (2013.01); H01L 21/28061 (2013.01); H01L 21/32136 (2013.01); H01L 21/32137 (2013.01); H01L 21/32139 (2013.01); H01L 21/76841 (2013.01); H01L 27/10885 (2013.01); H01L 27/10888 (2013.01); H01L 29/4941 (2013.01); H01L 27/10876 (2013.01);
Abstract

A method for fabricating a semiconductor device includes forming a silicon-containing layer; forming a metal-containing layer over the silicon-containing layer; forming an undercut prevention layer between the silicon containing layer and the metal containing layer; etching the metal-containing layer; and forming a conductive structure by etching the undercut prevention layer and the silicon-containing layer.

Find Patent Forward Citations

Rouh, Kyong-Bong. (2016). Method for fabricating semiconductor device including silicon-containing layer and metal-containing layer, and conductive structure of the same (U.S. Patent No. 9236263). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9236263

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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