The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 2016

Filed:

Sep. 11, 2014
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;

Inventors:

Yoshihiko Kamata, Yokohama Kanagawa, JP;

Yuko Yokota, Kamakura Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/22 (2006.01); G11C 16/26 (2006.01); G11C 16/14 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 16/14 (2013.01); G11C 16/3445 (2013.01);
Abstract

According to one embodiment, a nonvolatile semiconductor storage device includes a memory cell, a voltage generator configured to output a first voltage and a second voltage, and a controller. The controller executes a write operation, which includes a first read operation, a program operation, and a verify operation. The controller executes the first read operation before the program operation and the verify operation. The controller executes the first read operation by applying the first voltage to a gate of the memory cell. The controller executes an erase verify operation by applying the second voltage to the gate of the memory cell. The first voltage is higher than the second voltage.


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