The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 2016

Filed:

Feb. 26, 2014
Applicant:

SK Hynix Inc., Icheon-si Gyeonggi-do, KR;

Inventor:

Jung Woon Shim, Incheon, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01); G11C 16/10 (2006.01); G11C 16/04 (2006.01); G11C 16/24 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 16/0483 (2013.01); G11C 16/24 (2013.01);
Abstract

Provided are a semiconductor memory device and an operating method thereof. The semiconductor memory device includes a memory cell array including a plurality of strings, wherein each of the plurality of strings includes a first memory cell group, and a second memory cell group and peripheral circuits configured to generate a first precharge voltage applied to the first memory cell group and a second precharge voltage applied to the second memory cell group when a channel precharge operation is performed during a program operation, and generate a program voltage to apply the program voltage to the memory cell array when a program voltage application is performed.


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