The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 2016

Filed:

Feb. 02, 2015
Applicant:

Sandisk Technologies, Inc., Plano, TX (US);

Inventors:

Kenneth Louie, Sunnyvale, CA (US);

Khanh Nguyen, Fremont, CA (US);

Man Mui, Fremont, CA (US);

Assignee:

SanDisk Technologies Inc., Plano, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/08 (2006.01); G11C 16/16 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/16 (2013.01); G11C 16/26 (2013.01);
Abstract

When applying a programming voltage at one end of a word line of a non-volatile memory circuit, if the word line has a large RC constant the far end of the word line will not rise as fast as the driven end, which can adversely affect device performance. To more quickly raise the voltage on the selected word line, a voltage kick is applied to non-selected word lines, such as dummy word lines, by way of a non-selected sub-block of the selected block. The channel of NAND strings in the non-selected sub-block is used to transfer the kick to the far end of the selected word line of the selected sub-block.


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