The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 2016

Filed:

Dec. 17, 2009
Applicants:

I-wei Chen, Swarthmore, PA (US);

Soo Gil Kim, Drexel Hill, PA (US);

Albert Chen, Philadelphia, PA (US);

Yudi Wang, Drexel Hill, PA (US);

Inventors:

I-Wei Chen, Swarthmore, PA (US);

Soo Gil Kim, Drexel Hill, PA (US);

Albert Chen, Philadelphia, PA (US);

Yudi Wang, Drexel Hill, PA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); H01L 47/00 (2006.01); G11C 13/00 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0002 (2013.01); G11C 13/0009 (2013.01); H01L 45/10 (2013.01); H01L 45/1226 (2013.01); H01L 45/1233 (2013.01); H01L 45/14 (2013.01); G11C 2213/33 (2013.01);
Abstract

Disclosed herein is a resistive switching device having an amorphous layer comprised of an insulating silicon-containing material and a conducting material. The amorphous layer may be disposed between two or more electrodes and be capable of switching between at least two resistance states. Circuits and memory devices including resistive switching devices are also disclosed, and a composition of matter involving an insulating silicon-containing material and a conducting material comprising between 5 and 40 percent by molar percentage of the composition is disclosed herein as well. Also disclosed herein are methods for switching the resistance of an amorphous material.


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