The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Mar. 12, 2014
Applicants:
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Nec Corporation, Minato-ku, Tokyo, JP;
Inventors:
Assignees:
FUJITSU LIMITED, Kawasaki, JP;
NEC CORPORATION, Toyko, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/12 (2006.01); H01S 5/06 (2006.01); G02B 6/42 (2006.01); H01S 5/00 (2006.01); H01S 5/068 (2006.01); H01L 29/12 (2006.01);
U.S. Cl.
CPC ...
G02B 6/12 (2013.01); G02B 6/42 (2013.01); G02B 6/4266 (2013.01); H01S 5/005 (2013.01); H01S 5/068 (2013.01); G02B 6/4202 (2013.01); G02B 6/4224 (2013.01); G02B 6/4238 (2013.01); G02B 2006/12038 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12107 (2013.01); G02B 2006/12121 (2013.01); G02B 2006/12128 (2013.01); G02B 2006/12147 (2013.01); H01L 29/127 (2013.01);
Abstract
An optical semiconductor device includes a silicon oxide layer configured to be formed on a substrate; an optical waveguide part configured to be formed on the silicon oxide layer; a cladding layer configured to be formed covering the optical waveguide part; and a semiconductor laser configured to be disposed on the substrate. Laser light emitted from the semiconductor laser enters the optical waveguide part. The optical waveguide part increases transmittance of light when the wavelength becomes greater within an oscillation wavelength range of the semiconductor laser.