The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Mar. 30, 2015
Applicant:
California Institute of Technology, Pasadena, CA (US);
Inventors:
Andrew P. Homyk, South Pasadena, CA (US);
Michael D. Henry, Altadena, CA (US);
Axel Scherer, Barnard, VT (US);
Sameer Walavalkar, Studio City, CA (US);
Assignee:
CALIFORNIA INSTITUTE OF TECHNOLOGY, Pasadena, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/772 (2006.01); H01L 29/02 (2006.01); G01N 27/414 (2006.01); B82Y 10/00 (2011.01); H01L 29/06 (2006.01); H01L 29/775 (2006.01); H01L 29/66 (2006.01); B82Y 15/00 (2011.01);
U.S. Cl.
CPC ...
G01N 27/4146 (2013.01); B82Y 10/00 (2013.01); H01L 29/0676 (2013.01); H01L 29/66666 (2013.01); H01L 29/775 (2013.01); B82Y 15/00 (2013.01);
Abstract
Methods for fabricating silicon nanowire chemical sensing devices, devices thus obtained, and methods for utilizing devices for sensing and measuring chemical concentration of selected species in a fluid are described. Devices may comprise a metal-oxide-semiconductor field-effect transistor (MOSFET) structure.