The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Jan. 13, 2012
Applicants:
Chen Feng, Beijing, CN;
LI Fan, Beijing, CN;
Wen-mei Zhao, Beijing, CN;
Inventors:
Assignees:
Tsinghua University, Beijing, CN;
HON HAI PRECISION INDUSTRY CO., LTD., New Taipei, TW;
Primary Examiner:
Int. Cl.
CPC ...
C12N 5/0793 (2010.01); A61L 27/38 (2006.01); B82Y 5/00 (2011.01);
U.S. Cl.
CPC ...
A61L 27/3895 (2013.01); A61L 27/383 (2013.01); B82Y 5/00 (2013.01);
Abstract
A culture medium includes a carbon nanotube structure and a hydrophilic layer. The culture medium is capable of culturing at least one neuron. The hydrophilic layer has a polar surface and is located on a surface of the carbon nanotube structure. The polar surface is located on a surface of the hydrophilic layer away from the carbon nanotube structure, and has a polarity attracted to a polarity of the at least one neuron.