The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2016
Filed:
Feb. 12, 2013
Sony Corporation, Tokyo, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Kunihiko Tasai, Tokyo, JP;
Hiroshi Nakajima, Kanagawa, JP;
Noriyuki Futagawa, Kanagawa, JP;
Katsunori Yanashima, Kanagawa, JP;
Yohei Enya, Hyogo, JP;
Tetsuya Kumano, Osaka, JP;
Takashi Kyono, Osaka, JP;
Sony Corporation, Tokyo, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
A semiconductor device includes: a semiconductor substrate made of a hexagonal Group III nitride semiconductor and having a semi-polar plane; and an epitaxial layer formed on the semi-polar plane of the semiconductor substrate and including a first cladding layer of a first conductive type, a second cladding layer of a second conductive type, and a light-emitting layer formed between the first cladding layer and the second cladding layer, the first cladding layer being made of InAlGaN, where x>0 and y>0, the second cladding layer being made of InAlGaN, where0≦x≦about 0.02 and about 0.03≦y≦about 0.07.