logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9231374 B1

PDFFull Text
Date of Patent:
Jan. 05, 2016

Filed:

Aug. 22, 2014

Multi-beam semiconductor laser device

Applicant:

Oclaro Japan, Inc., Kanagawa, JP;

Inventors:

Yutaka Inoue, Nagano, JP;

Hideki Hara, Nagano, JP;

Shuichi Usuda, Nagano, JP;

Assignee:

USHIO OPTO SEMICONDUCTORS, INC., Tokyo, JP;

Attorney:

Mattingly & Malur, PC

Primary Examiner:

Armando Rodriguez

Int. Cl.
CPC ...
H01S 5/22 (2006.01); H01S 5/343 (2006.01); H01S 5/34 (2006.01); H01S 5/40 (2006.01); H01S 5/022 (2006.01); H01S 5/042 (2006.01); H01S 5/10 (2006.01);
U.S. Cl.
CPC ...
H01S 5/22 (2013.01); H01S 5/0224 (2013.01); H01S 5/02256 (2013.01); H01S 5/343 (2013.01); H01S 5/3407 (2013.01); H01S 5/40 (2013.01); H01S 5/4031 (2013.01); H01S 5/02272 (2013.01); H01S 5/0425 (2013.01); H01S 5/1082 (2013.01);
Abstract

Provided is a multi-beam semiconductor laser device in which deterioration of element characteristics is suppressed even when a beam pitch is reduced. The multi-beam semiconductor laser device includes: a first semiconductor multilayer in which a plurality of semiconductor layers are laminated; a plurality of light emitting ridge portions that are formed on the first semiconductor multilayer; a support electrode portion formed in a region between a pair of neighboring light emitting ridge portions; and a front ridge portion formed on the front side of the support electrode portion. The support electrode portion is electrically connected to one of the pair of neighboring light emitting ridge portions. The support electrode portion is higher than the one light emitting ridge portion. An end of the front ridge portion on the front end surface side is higher than the one light emitting ridge portion at the front end surface.

Find Patent Forward Citations

Inoue, Yutaka. (2016). Multi-beam semiconductor laser device (U.S. Patent No. 9231374). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9231374

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…