The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2016
Filed:
May. 16, 2014
Electronics and Telecommunications Research Institute, Daejeon, KR;
In Gyoo Kim, Daejeon, KR;
Sang Hoon Kim, Daejeon, KR;
Jaegyu Park, Daejeon, KR;
Gyungock Kim, Daejeon, KR;
Ki Seok Jang, Daejeon, KR;
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE, Daejeon, KR;
Abstract
Provided is a method of fabricating a semiconductor laser. The method includes: providing a semiconductor substrate including a first region and a second region; forming a silicon single crystal layer in the second region of the semiconductor substrate by using a selective epitaxial growth process; forming an optical coupler by using the silicon single crystal layer; and forming a laser core structure including a germanium single crystal layer in the first region of the semiconductor substrate by using a selective epitaxial growth process.