The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2016
Filed:
Jul. 24, 2012
Applicants:
Ashish Shah, East Amherst, NY (US);
Robert Rubino, Williamsville, NY (US);
Hong Gan, Williamsville, NY (US);
Inventors:
Ashish Shah, East Amherst, NY (US);
Robert Rubino, Williamsville, NY (US);
Hong Gan, Williamsville, NY (US);
Assignee:
Greatbatch Ltd., Clarence, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01M 6/16 (2006.01); H01M 4/04 (2006.01); H01M 4/08 (2006.01); H01M 4/131 (2010.01); H01M 4/133 (2010.01); H01M 4/1391 (2010.01); H01M 4/1393 (2010.01); H01M 4/485 (2010.01); H01M 4/583 (2010.01); H01M 10/052 (2010.01); H01M 10/058 (2010.01); H01M 4/66 (2006.01);
U.S. Cl.
CPC ...
H01M 6/16 (2013.01); H01M 4/043 (2013.01); H01M 4/08 (2013.01); H01M 4/131 (2013.01); H01M 4/133 (2013.01); H01M 4/1391 (2013.01); H01M 4/1393 (2013.01); H01M 4/485 (2013.01); H01M 4/5835 (2013.01); H01M 10/052 (2013.01); H01M 10/058 (2013.01); H01M 4/661 (2013.01); H01M 4/663 (2013.01); H01M 4/667 (2013.01); Y02E 60/122 (2013.01);
Abstract
The traditional method of pressing CF, screen and SVO sheet assembly results in an electrode that is cupped and not flat. This results in the reduction of the effective volumetric energy density of the electrode or the addition of a process step of flattening of the cathode if at all possible. The new method of assembly effectively eliminates the cupping behavior and produces a flat electrode. In addition, the physical density of the cathode is also increased.