The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2016
Filed:
Aug. 14, 2012
Woo-yong Sung, Seoul, KR;
Dong-hwan Kim, Asan-si, KR;
Jeong-ho Lee, Seoul, KR;
Tae-woon Cha, Seoul, KR;
Sang-gun Choi, Suwon-si, KR;
Woo-Yong Sung, Seoul, KR;
Dong-Hwan Kim, Asan-si, KR;
Jeong-Ho Lee, Seoul, KR;
Tae-Woon Cha, Seoul, KR;
Sang-Gun Choi, Suwon-si, KR;
SAMSUNG DISPLAY CO., LTD., Yongin-Si, Gyeonggi-Do, KR;
Abstract
A thin film transistor ('TFT') includes a gate electrode, a gate insulating layer, a source electrode, a drain electrode and a semiconductor layer. The gate insulating layer is disposed on the gate electrode. The source electrode is disposed on the gate insulating layer. The drain electrode is disposed on the gate insulating layer. The drain electrode is spaced apart from the source electrode. The semiconductor layer is disposed on the gate insulating layer. The semiconductor layer makes contact with a side surface of the source electrode and a side surface of the drain electrode.