The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 05, 2016

Filed:

Jun. 28, 2005
Applicants:

Robertus Theodorus Fransiscus Van Schaijk, Leuven, BE;

Prabhat Agarwal, Leuven, BE;

Erik Petrus Antonius Maria Bakkers, Eindhoven, NL;

Martijn Henri Richard Lankhorst, Eindhoven, NL;

Michiel Jos Van Duuren, Leuven, BE;

Abraham Rudolf Balkenende, Eindhoven, NL;

Louis Felix Feiner, Eindhoven, NL;

Pierre Hermanus Woerlee, Eindhoven, NL;

Assignee:

NXP B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01); H01L 45/00 (2006.01); B82Y 10/00 (2011.01); G11C 13/02 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 27/24 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1273 (2013.01); B82Y 10/00 (2013.01); G11C 13/025 (2013.01); H01L 21/28525 (2013.01); H01L 21/76879 (2013.01); H01L 27/2409 (2013.01); H01L 27/2436 (2013.01); H01L 27/2472 (2013.01); H01L 27/2481 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/144 (2013.01); H01L 45/148 (2013.01); H01L 45/16 (2013.01); G11C 13/0004 (2013.01); G11C 2213/81 (2013.01);
Abstract

The electric device () according to the invention comprises a layer () of a memory material which has an electrical resistivity switchable between a first value and a second value. The memory material may be a phase change material. The electric device () further comprises a set of nanowires (NW) electrically connecting a first terminal () of the electric device and the layer () of memory material thereby enabling conduction of an electric current from the first terminal via the nanowires (NW) and the layer () of memory material to a second terminal () of the electric device. Each nanowire (NW) electrically contacts the layer () of memory material in a respective contact area. All contact areas are substantially identical. The method according to the invention is suited to manufacture the electric device () according to the invention.


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