The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9231199 B1

Date of Patent:

Jan. 05, 2016

Filed:

May. 08, 2014

Electronic device including a switch element in which a metal nitride layer has a nitrogen concentration increasing as a closer distance from a switching layer, and method for fabricating the same

Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Kee-Jeung Lee, Icheon-si, KR;

Wan-Gee Kim, Icheon-si, KR;

Assignee:

SK HYNIX INC., Icheon, KR;

Attorney:

Primary Examiner:

Thanh Y Tran

Int. Cl.

CPC ...

H01L 29/74 (2006.01); H01L 45/00 (2006.01); G06F 12/08 (2006.01); G06F 13/16 (2006.01);

U.S. Cl.

CPC ...

H01L 45/1253 (2013.01); G06F 12/08 (2013.01); G06F 13/1673 (2013.01); H01L 45/141 (2013.01); H01L 45/145 (2013.01); H01L 45/146 (2013.01);

Abstract

An electronic device includes a switch element. The switch element includes a first electrode including a first metal nitride which is conductive, a second electrode, a switching layer interposed between the first electrode and the second electrode, and a first barrier layer which is interposed between the first electrode and the switching layer and includes a second metal nitride which is insulative, wherein a metal in the first metal nitride is the same as a metal in the second metal nitride, and a metal-to-nitrogen bonding ratio of the first metal nitride is different from a metal-to-nitrogen bonding ratio of the second metal nitride.

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