The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2016
Filed:
Nov. 26, 2014
Applicants:
Young Ki Lee, Seoul, KR;
Seog Moon Choi, Seoul, KR;
Sang Hyun Shin, Gyunggi-do, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/207 (2006.01); H01L 33/48 (2010.01); H05K 3/28 (2006.01); H01L 33/62 (2010.01); H01L 33/60 (2010.01);
U.S. Cl.
CPC ...
H01L 33/486 (2013.01); H01L 33/62 (2013.01); H05K 3/28 (2013.01); H01L 33/60 (2013.01); H05K 2203/0315 (2013.01); H05K 2203/0542 (2013.01);
Abstract
An insulation structure for high temperature conditions and a manufacturing method thereof. In the insulation structure, a substrate has a conductive pattern formed on at least one surface thereof for electrical connection of a device. A metal oxide layer pattern is formed on a predetermined portion of the conductive pattern by anodization, the metal oxide layer pattern made of one selected from a group consisting of Al, Ti and Mg.