The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2016
Filed:
Apr. 12, 2013
Applicant:
Epistar Corporation, Hsinchu, TW;
Inventors:
Ting-Chia Ko, Hsinchu, TW;
De-Shan Kuo, Hsinchu, TW;
Chun-Hsiang Tu, Hsinchu, TW;
Po-Shun Chiu, Hsinchu, TW;
Chien-Kai Chung, Hsinchu, TW;
Hui-Chun Yeh, Hsinchu, TW;
Min-Yen Tsai, Hsinchu, TW;
Tsun-Kai Ko, Hsinchu, TW;
Assignee:
EPISTAR CORPORATION, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/42 (2010.01); H01L 33/22 (2010.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 33/42 (2013.01); H01L 33/405 (2013.01); H01L 33/0095 (2013.01); H01L 33/22 (2013.01); H01L 33/40 (2013.01);
Abstract
A light-emitting device comprises a first semiconductor layer; and a transparent conductive oxide layer comprising a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region.