The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2016
Filed:
Apr. 26, 2012
Akinori Yoneda, Anan, JP;
Hirofumi Kawaguchi, Tokushima, JP;
Kouichiroh Deguchi, Tokushima, JP;
NICHIA CORPORATION, Anan-Shi, JP;
Abstract
A method of manufacturing a flip-chip nitride semiconductor light emitting element includes steps of providing a nitride semiconductor light emitting element structure; forming an insulating protective layer on the nitride semiconductor light emitting element structure; forming a resist pattern having openings above an n-side electrode connecting surface and a p-side electrode connecting surface; etching the protective layer to expose the n-side electrode connecting surface and the p-side electrode connecting surface using the resist pattern as a mask; forming a first metal layer that becomes an n-side electrode and a p-side electrode, the first metal layer being formed as a continuous layer disposed on the n-side electrode connecting surface, the p-side electrode connecting surface and the resist pattern; forming a second metal layer that becomes metal bumps by electrolytic plating using the first metal layer as an electrode for the electrolytic plating; and removing the resist pattern.