The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2016
Filed:
Jun. 03, 2011
Applicants:
Hasan Sharifi, Agoura Hills, CA (US);
Terence J. DE Lyon, Newbury Park, CA (US);
Rajesh D. Rajavel, Oak Park, CA (US);
Inventors:
Hasan Sharifi, Agoura Hills, CA (US);
Terence J. De Lyon, Newbury Park, CA (US);
Rajesh D. Rajavel, Oak Park, CA (US);
Assignee:
HRL Laboratories, LLC, Malibu, CA (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0232 (2014.01); H01L 31/0328 (2006.01); H01L 31/0224 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0328 (2013.01); H01L 31/0224 (2013.01);
Abstract
Using a highly doped Cap layer of the same composition as the Contact material in an nBn or pBp infrared photodetector allows engineering of the energy band diagram to facilitate minority carrier current flow in the contact region and block minority current flow outside the Contact region. The heavily doped Cap layer is disposed on the Barrier between the Contacts but electrically isolated from the Contact material.