The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2016
Filed:
Aug. 31, 2012
Donald Franklin Foust, Glenville, NY (US);
Hongbo Cao, Cohoes, NY (US);
Laura Anne Clark, Brighton, CO (US);
Robert Andrew Garber, Denver, CO (US);
Scott Daniel Feldman-peabody, Golden, CO (US);
Wyatt Keith Metzger, Louisville, CO (US);
Yinghui Shan, Cohoes, NY (US);
Roman Shuba, Albany, CA (US);
Donald Franklin Foust, Glenville, NY (US);
Hongbo Cao, Cohoes, NY (US);
Laura Anne Clark, Brighton, CO (US);
Robert Andrew Garber, Denver, CO (US);
Scott Daniel Feldman-Peabody, Golden, CO (US);
Wyatt Keith Metzger, Louisville, CO (US);
Yinghui Shan, Cohoes, NY (US);
Roman Shuba, Albany, CA (US);
First Solar, Inc., Tempe, AZ (US);
Abstract
Photovoltaic devices are presented. A photovoltaic device includes a window layer and a semiconductor layer including a semiconductor material disposed on window layer. The semiconductor layer includes a first region and a second region, the first region disposed proximate to the window layer, and the second region including a chalcogen-rich region, wherein the first region and the second region include a dopant, and an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region.