The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 05, 2016

Filed:

Jun. 26, 2012
Applicants:

Andrey Stekolnikov, Leipzig, DE;

Robert Seguin, Berlin, DE;

Maximilian Scherff, Dortmund, DE;

Peter Engelhart, Leipzig, DE;

Matthias Heimann, Dresden, DE;

Til Bartel, Berlin, DE;

Markus Träger, Leipzig, DE;

Max Köntopp, Berlin, DE;

Inventors:

Andrey Stekolnikov, Leipzig, DE;

Robert Seguin, Berlin, DE;

Maximilian Scherff, Dortmund, DE;

Peter Engelhart, Leipzig, DE;

Matthias Heimann, Dresden, DE;

Til Bartel, Berlin, DE;

Markus Träger, Leipzig, DE;

Max Köntopp, Berlin, DE;

Assignee:

HANWHA Q CELLS GMBH, Bitterfeld-Wolfen, DE;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H01L 31/02 (2006.01); H01L 31/068 (2012.01);
U.S. Cl.
CPC ...
H01L 31/02008 (2013.01); H01L 31/022425 (2013.01); H01L 31/068 (2013.01); Y02E 10/547 (2013.01);
Abstract

A solar cell includes a semiconductor wafer, at least one dielectric layer arranged on the semiconductor wafer, a metal layer arranged on the dielectric layer, and a contact structure arranged in the dielectric layer such that the contact structure provides an electrical connection between the metal layer and the semiconductor wafer. The contact structure has at least one first structure having a minimum dimension and at least one second structure having a maximum dimension, wherein the minimum dimension and the maximum dimension are defined along a surface of the semiconductor wafer and the minimum dimension of the first structure is greater than the maximum dimension of the second structure.


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