The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2016
Filed:
Jun. 28, 2013
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Masaya Terai, Kanagawa, JP;
Shigeki Hattori, Kanagawa, JP;
Takatoshi Watanabe, Kanagawa, JP;
Masakazu Yamagiwa, Kanagawa, JP;
Wangying Lin, Kanagawa, JP;
Koji Asakawa, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a block insulating layer; an organic molecular layer, which is formed between the semiconductor layer and the block insulating layer, and contains first organic molecules and second organic molecules, and in which the first organic molecule has a first alkyl chain or a first alkyl halide chain on the semiconductor layer side and a charge trapping unit on the block insulating layer side, and the second organic molecule has a second alkyl chain or a second alkyl halide chain on the semiconductor layer side and a hydroxy group, an ether group, a carboxyl group or an ester group on the block insulating layer side; and a control gate electrode formed on the block insulating layer.