The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 05, 2016

Filed:

Dec. 03, 2013
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

SeYeoul Kwon, Goyang-si, KR;

MinGu Cho, Goyang-si, KR;

Sangcheon Youn, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78618 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01);
Abstract

A thin film transistor, a method of manufacturing the thin film transistor, and a display device including the thin film transistor are provided. The thin film transistor comprises an oxide semiconductor layer, a gate electrode, a source electrode and a drain electrode formed on a substrate in a coplanar configuration. A first conductive member is in direct contact with the oxide semiconductor layer and in direct contact with the source electrode. A second conductive member is in direct contact with the oxide semiconductor layer and in direct contact with the drain electrode. The first conductive member and the second conductive member are arranged to decrease resistance between a channel region of the oxide semiconductor layer and the source and drain electrodes.


Find Patent Forward Citations

Loading…