The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2016
Filed:
Sep. 05, 2014
Seiko Instruments Inc., Chiba-shi, Chiba, JP;
Yukimasa Minami, Chiba, JP;
SEIKO INSTRUMENTS INC., , JP;
Abstract
A semiconductor device includes a semiconductor substrate, a body region, a body contact region and a cancelling region each of the first conductivity type, and a buried layer, an epitaxial layer and a source region each of the second conductivity type. A trench is provided in the epitaxial layer from a surface thereof. A gate insulating film is provided on an inner wall of the trench, and a gate electrode made of polycrystalline silicon is in contact with the gate insulating film and fills the trench. The cancelling region, which is provided below a bottom surface of the trench for cancelling a conductivity type of the buried layer, has a distribution center located below a boundary surface between the buried layer and the epitaxial layer. A trench bottom surface lower region of the first conductivity type is provided from the bottom surface of the trench continuously to the cancelling region.