The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 05, 2016

Filed:

Apr. 29, 2014
Applicant:

Seagate Technology Llc, Cupertino, CA (US);

Inventors:

Antoine Khoueir, Apple Valley, MN (US);

YoungPil Kim, Eden Prairie, MN (US);

Rodney Virgil Bowman, Bloomington, MN (US);

Assignee:

Seagate Technology LLC, Cupertino, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2006.01); H01L 29/66 (2006.01); H01L 29/788 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66825 (2013.01); H01L 27/11519 (2013.01); H01L 27/11551 (2013.01); H01L 27/11556 (2013.01); H01L 29/401 (2013.01); H01L 29/42324 (2013.01); H01L 29/7889 (2013.01);
Abstract

Memory arrays that include a first memory cell having a channel; a first insulator; a floating gate; a second insulator; and a control gate, wherein the first insulator is positioned between the channel and the floating gate, the second insulator is positioned between the floating gate and the control gate; and a second memory cell having a channel; a first insulator; a floating gate; a second insulator; and a control gate, wherein the first insulator is positioned between the channel and the floating gate, the second insulator is positioned between the floating gate and the control gate, wherein the first memory cell and the second memory cell are positioned parallel to each other.


Find Patent Forward Citations

Loading…