The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2016
Filed:
Oct. 24, 2011
Mengbing Huang, Schenectady, NY (US);
Nirag Kadakia, San Antonio, TX (US);
Sebastian Naczas, Albany, NY (US);
Hassaram Bakhru, Loudonville, NY (US);
Mengbing Huang, Schenectady, NY (US);
Nirag Kadakia, San Antonio, TX (US);
Sebastian Naczas, Albany, NY (US);
Hassaram Bakhru, Loudonville, NY (US);
The Research Foundation of State University of New York, Albany, NY (US);
Abstract
The invention relates to a new method of texturing silicon surfaces suited for antireflection based on ion implantation of hydrogen and heavy ions or heavy elements combined with thermal annealing or thermal annealing and oxidation. The addition of the heavy ions or heavy elements allows for a more effective anti-reflective surface than is found when only hydrogen implantation is utilized. The methods used are also time- and cost-effective, as they can utilize already existing semiconductor ion implantation fabrication equipment and reduce the number of necessary steps. The antireflective surfaces are useful for silicon-based solar cells.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile