The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 05, 2016

Filed:

Jun. 06, 2014
Applicants:

Madhur Bobde, San Jose, CA (US);

Lingping Guan, Sunnyvale, CA (US);

Anup Bhalla, Santa Clara, CA (US);

Hamza Yilmaz, Saratoga, CA (US);

Inventors:

Madhur Bobde, San Jose, CA (US);

Lingping Guan, Sunnyvale, CA (US);

Anup Bhalla, Santa Clara, CA (US);

Hamza Yilmaz, Saratoga, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 21/761 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0619 (2013.01); H01L 21/761 (2013.01);
Abstract

This invention discloses a semiconductor power device disposed in a semiconductor substrate and having an active cell area and an edge termination area the edge termination area wherein the edge termination area comprises a superjunction structure having doped semiconductor columns of alternating conductivity types with a charge imbalance between the doped semiconductor columns to generate a saddle junction electric field in the edge termination.


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