The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2016
Filed:
May. 30, 2014
Texas Instruments Incorporated, Dallas, TX (US);
Henry Litzmann Edwards, Garland, TX (US);
Kenneth James Maggio, Dallas, TX (US);
Toan Tran, Rowlett, TX (US);
Jihong Chen, Plano, TX (US);
Jeffrey R. Debord, Dallas, TX (US);
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Abstract
An integrated circuit containing CMOS transistors and an embedded thermoelectric device may be formed by forming field oxide in isolation trenches to isolate the CMOS transistors and thermoelectric elements of the embedded thermoelectric device. N-type dopants are implanted into the substrate to provide at least 1×10cmn-type dopants in n-type thermoelectric elements and the substrate under the field oxide between the n-type thermoelectric elements. P-type dopants are implanted into the substrate to provide at least 1×10cmp-type dopants in p-type thermoelectric elements and the substrate under the field oxide between the p-type thermoelectric elements. The n-type dopants and p-type dopants may be implanted before the field oxide are formed, after the isolation trenches for the field oxide are formed and before dielectric material is formed in the isolation trenches, and/or after the field oxide is formed.