The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2016
Filed:
Jan. 16, 2014
Dmitry Veinger, Zikhron Ya'akov, IL;
Assaf Lahav, Binyamina, IL;
Omer Katz, Nofit, IL;
Ruthie Shima-edelstein, Haifa, IL;
Dmitry Veinger, Zikhron Ya'akov, IL;
Assaf Lahav, Binyamina, IL;
Omer Katz, Nofit, IL;
Ruthie Shima-Edelstein, Haifa, IL;
TOWER SEMICONDUCTOR LTD., Migdal Haemek, IL;
Abstract
Some demonstrative embodiments include devices and/or methods of gettering on silicon on insulator (SOI) substrate. For example, a complementary metal-oxide-semiconductor (CMOS) integrated circuit (IC) may include a plurality of pixels arranged on a wafer, a pixel of the pixels including: a silicon active area; at least one non-silicided leakage-sensitive component formed on the active area, the leakage-sensitive component is sensitive to metal contaminants; a non-leakage-sensitive area formed on the active area, the non-leakage-sensitive area surrounding the leakage-sensitive component; and at least one silicided gettering region formed on the non-leakage-sensitive area to trap the metal contaminants.