The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2016
Filed:
Jul. 31, 2014
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Sung Lae Oh, Chungcheongbuk-do, KR;
Go Hyun Lee, Gyeonggi-do, KR;
Chang Man Son, Gyeonggi-do, KR;
Soo Nam Jung, Seoul, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); H01L 27/115 (2006.01); H01L 29/792 (2006.01); G11C 5/06 (2006.01); G11C 16/08 (2006.01); G11C 16/24 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); G11C 5/063 (2013.01); G11C 16/0466 (2013.01); G11C 16/08 (2013.01); G11C 16/24 (2013.01); H01L 27/11573 (2013.01); H01L 29/7926 (2013.01);
Abstract
Provided are a semiconductor device. The semiconductor device includes a memory block including a drain select line, word lines, and a source select line, which are spaced apart from one another and stacked in a direction perpendicular to a semiconductor substrate; and a peripheral circuit including a switching device connected to a bit line, which is disposed under a vertical channel layer vertically passing through the drain select line, the word lines, and the source select line.