The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 05, 2016

Filed:

Mar. 12, 2013
Applicant:

Sumitomo Bakelite Co., Ltd., Tokyo, JP;

Inventor:

Shingo Itoh, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/49 (2006.01); H01L 23/495 (2006.01); H01L 23/00 (2006.01); H01L 21/56 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49575 (2013.01); H01L 21/56 (2013.01); H01L 23/293 (2013.01); H01L 23/49582 (2013.01); H01L 24/05 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 24/85 (2013.01); H01L 23/3107 (2013.01); H01L 23/4952 (2013.01); H01L 24/83 (2013.01); H01L 2224/02166 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/45015 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48451 (2013.01); H01L 2224/48465 (2013.01); H01L 2224/48624 (2013.01); H01L 2224/48824 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/83101 (2013.01); H01L 2224/83862 (2013.01); H01L 2224/85205 (2013.01); H01L 2224/85948 (2013.01); H01L 2224/92247 (2013.01); H01L 2924/181 (2013.01);
Abstract

A semiconductor device includes a semiconductor element that is mounted on a substrate, an electrode pad that contains aluminum as a main component and is provided in the semiconductor element, a copper wire that contains copper as a main component and connects a connection terminal provided on the substrate and the electrode pad, and an encapsulant resin that encapsulates the semiconductor element and the copper wire. When the semiconductor device is heated at 200° C. for 16 hours in the atmosphere, a barrier layer containing any metal selected from palladium and platinum is farmed at a junction between the copper wire and the electrode pad.


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