The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 05, 2016

Filed:

Dec. 26, 2013
Applicants:

Jae-han Lee, Seoul, KR;

Hoo-sung Cho, Yongin-si, KR;

Cheol-hong Kim, Yongin-si, KR;

Seung-hak Park, Hwaseong-si, KR;

Inventors:

Jae-Han Lee, Seoul, KR;

Hoo-Sung Cho, Yongin-si, KR;

Cheol-Hong Kim, Yongin-si, KR;

Seung-Hak Park, Hwaseong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/027 (2006.01); H01L 21/66 (2006.01); H01L 21/311 (2006.01); G03F 1/70 (2012.01); H01L 27/115 (2006.01); G03F 1/84 (2012.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); G03F 1/70 (2013.01); H01L 21/31144 (2013.01); G03F 1/84 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01);
Abstract

A fabricating method of a customized mask includes forming first patterns in a mold structure, forming second patterns in the mold structure using initial masks, the mold structure having the first patterns formed therein, measuring overlap failure between the first patterns and the second patterns, and fabricating customized masks by compensating for pattern positions of the initial masks based on the measuring results, wherein compensating for the pattern positions of the initial masks includes shifting positions of at least some patterns of the initial masks according to shift directions and sizes of at least some of the first patterns.


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