The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2016
Filed:
Apr. 15, 2014
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Shiori Nonaka, Jyoetsu, JP;
Seiichiro Tachibana, Jyoetsu, JP;
Daisuke Kori, Jyoetsu, JP;
Toshihiko Fujii, Jyoetsu, JP;
Tsutomu Ogihara, Jyoetsu, JP;
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
Abstract
The present invention provides a method for forming a resist under layer film used in a lithography process, comprising: a process for applying a composition for forming a resist under layer film containing an organic compound having an aromatic unit on a substrate; and a process for heat-treating the resist under layer film applied in an atmosphere whose oxygen concentration is 10% or more at 150° C. to 600° C. for 10 to 600 seconds after heat-treating the same in an atmosphere whose oxygen concentration is less than 10% at 50 to 350° C. There can be provided a method for forming a resist under layer film having excellent filling/flattening properties so that unevenness on a substrate can be flattened even in complex processes such as multi-layer resist method and double patterning.