The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2016
Filed:
Apr. 08, 2013
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
S'tile, Buxerolles, FR;
Jean-Paul Garandet, Le Bourget du Lac, FR;
Virginie Brize, Saint Martin D'heres, FR;
Etienne Pihan, La Motte Servolex, FR;
Alain Straboni, Buxerolles, FR;
Florent Dupont, Montamise, FR;
Commissariat a l'Energie Atomique et aux Energies Alternatives, Paris, FR;
S'Tile, Buxerolles, FR;
Abstract
The present invention relates to a method for forming a crystallized silicon layer made up of grains having an average size of no less than 20 μm, including at least the steps that comprise: (1) providing a layer of silicon to be (re)crystallized, the average grain size of which is less than 10 μm; (2) placing said layer of silicon to be (re)crystallized in contact with a liquid composition at least partially made up of a metal solvent; and (3) exposing the assembly to a thermal treatment suitable for (re)crystallizing said layer of silicon with the expected grain size, characterized in that said thermal treatment includes heating the assembly made up of the layer of silicon in contact with said liquid composition to a temperature that is lower than 1410° C. and at least equal to the eutectic temperature in the solvent-silicon phase diagram.