The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2016
Filed:
Sep. 23, 2011
Applicants:
Sangmoon Lee, Yongin-si, KR;
Euijoon Yoon, Seoul, KR;
Jinsub Park, Suwon-si, KR;
Sung Hyun Park, Seoul, KR;
Inventors:
Sangmoon Lee, Yongin-si, KR;
Euijoon Yoon, Seoul, KR;
Jinsub Park, Suwon-si, KR;
Sung Hyun Park, Seoul, KR;
Assignees:
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
SNU R&DB FOUNDATION, Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0254 (2013.01); H01L 21/0242 (2013.01); H01L 21/02378 (2013.01); H01L 21/02381 (2013.01); H01L 21/02392 (2013.01); H01L 21/02395 (2013.01); H01L 21/02398 (2013.01); H01L 21/02488 (2013.01); H01L 21/02628 (2013.01); H01L 21/02647 (2013.01);
Abstract
A semiconductor device includes a first non-flat non-polar nitride semiconductor layer, a first structure layer on at least a portion of the surface of the first non-flat non-polar nitride semiconductor layer and a first non-polar nitride semiconductor layer on the first non-flat non-polar nitride semiconductor layer and the first structure layer. The first non-flat non-polar nitride semiconductor layer includes a plurality of solid particles.