The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2016
Filed:
Aug. 08, 2014
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka, JP;
Abstract
A method for manufacturing a semiconductor optical device includes the steps of growing a stacked layer including lower and upper core layers, a first upper region including a non-doped layer, a second upper region including a p-type layer, and a cap layer; forming an upper mesa by etching the stacked layer; selectively etching the cap layer in the upper mesa on the first and second regions; forming a mask on the upper mesa in the second and third regions; and etching the upper mesa using the mask so as to form first to fourth mesa portions. The first and fourth mesa portions are formed by etching the first and second upper regions, and the second upper region and the cap layer, respectively. The second and third mesa portions are formed by etching the first and second upper regions, and the second upper region and the cap layer, respectively.