The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2016
Filed:
Oct. 01, 2010
Toshiyuki Usagawa, Saitama, JP;
Toshiyuki Usagawa, Saitama, JP;
HITACHI, LTD., Tokyo, JP;
Abstract
A MISFET-type hydrogen gas sensor having low power consumption which can be operated for one year or longer at a low voltage power source (for example, 1.5 to 3 V) is achieved. A sensor FET is formed in a MEMS regionwhere a Si substrateof a SOI substrate is bored, and a heater wiringis arranged so as to be folded between a Pi-Ti—O gateand a source electrodeS of the sensor FET and between the Pt—Ti—O gateand a drain electrodeD thereof, respectively. Further, a plurality of through-holesobtained by removing a protective film so as to expose an embedded insulation layer of the SOI substrate are formed in a region where an intrinsic FET regionwhere the sensor FET is formed does not overlap with the MEMS regionand except for bridge regionsS,G, andH where lead-out wiringsS,D,G, andH are formed and except for reinforced regions