The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2016
Filed:
Jun. 22, 2010
Zhizhan Chen, Shanghai, CN;
Erwei Shi, Shanghai, CN;
Chengfeng Yan, Shanghai, CN;
Bing Xiao, Shanghai, CN;
Zhizhan Chen, Shanghai, CN;
Erwei Shi, Shanghai, CN;
Chengfeng Yan, Shanghai, CN;
Bing Xiao, Shanghai, CN;
RESEARCH AND DEVELOPMENT CENTER, SHANGHAI INSTITUTE OF CERAMICS, Shanghai, CN;
SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES, Shanghai, CN;
Abstract
An apparatus with two-chamber structure for growing silicon carbide (SiC) crystals is disclosed. The apparatus comprises a sample feed chamber and a crystal growth chamber, both of which are separately connected with each other by a vacuum baffle valve and connected with a vacuum system. The crystal growth apparatus ensures that the insulation materials in the crystal growth chamber cannot contact with air, minimizes the adsorption of nitrogen and pollutants on the insulation materials and the growth chamber, improves purity of SiC crystals and achieves precise control of the impurities so that growth of high-quality SiC crystals such as conductive, doped semi-insulating or high-purity semi-insulating SiC crystals and the like is enabled.