The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 05, 2016

Filed:

Jun. 29, 2010
Applicants:

Akiyoshi Shibuya, Tokyo, JP;

Kenji Hata, Tsukuba, JP;

Motoo Yumura, Tsukuba, JP;

Inventors:

Akiyoshi Shibuya, Tokyo, JP;

Kenji Hata, Tsukuba, JP;

Motoo Yumura, Tsukuba, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
D01F 9/12 (2006.01); B01J 19/00 (2006.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); B01J 19/22 (2006.01); B01J 15/00 (2006.01); C01B 31/02 (2006.01);
U.S. Cl.
CPC ...
B01J 19/22 (2013.01); B01J 15/005 (2013.01); B01J 19/0006 (2013.01); B01J 19/0073 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C01B 31/024 (2013.01); B01J 2219/00159 (2013.01);
Abstract

Provided is a production apparatus () for continuously producing aligned carbon nanotube aggregates on a substrate supporting a catalyst while continuously transferring the substrate. The production apparatus () includes gas mixing prevention means () for preventing gas present outside a growth furnace () from flowing into the growth furnace (). The gas mixing prevention means () includes a seal gas ejection section () so that the seal gas does not flow into the growth furnace through the openings of the growth furnace. The production apparatus prevents the outside air from flowing into the production apparatus, uniformly controls, within a range suitable to production of CNTs, a concentration distribution(s) and a flow rate distribution(s) of a raw material gas and/or a catalyst activation material on the substrate, and does not disturb gas flow as much as possible in the growth furnace.


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