The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
Feb. 19, 2013
Applicant:
St-ericsson SA, Plan-les-Ouates, CH;
Inventor:
Vincent Knopik, St. Pierre d'Allevard, FR;
Assignee:
ST-ERICSSON SA, Plan-les-Ouates, CH;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/52 (2006.01); H03F 3/191 (2006.01); H03F 3/24 (2006.01); H03F 3/19 (2006.01);
U.S. Cl.
CPC ...
H03F 1/52 (2013.01); H03F 3/19 (2013.01); H03F 3/191 (2013.01); H03F 3/245 (2013.01); H03F 2200/21 (2013.01); H03F 2200/444 (2013.01); H03F 2200/468 (2013.01); H03F 2200/471 (2013.01);
Abstract
A protection module () for a RF-amplifier () is efficient against overvoltage due to load impedance mismatch when said RF-amplifier is connected to a load RF-element (). The protection module comprises a branch with at least one diode-like operating component (D, D, . . . , Dn) and a resistor (R) which starts conducting when a RF-signal on a transmission link () between the RF-amplifier and the load RF-element is higher than a threshold set by the diode-like operating component. Such protection may be implemented in MOS technology only.